3C-SiC Films Grown on Si(111) Substrates as a Template for Graphene Epitaxy

被引：6

作者：

Fanton, M. A. ^{[1
]}

Robinson, J. A. ^{[1
]}

Weiland, B. E. ^{[1
]}

Moon, J. ^{[2
]}

机构：

[1] Penn State Univ, Elect Opt Ctr, Freeport, PA 16229 USA

[2] Hughes Res Labs, Malibu, CA 90265 USA

来源：

GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS | 2009年 / 19卷 / 05期

关键词：

C2H2;

D O I：

10.1149/1.3119537

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

High quality (111) oriented SiC films were grown Si(111 substrates using a low temperature halogen-based process. The goal of this work was to produce SiC films with a high crystal quality and very low surface roughness for subsequent epitaxial growth of graphene films. SiC films with narrow x-ray diffraction peak widths and surface roughnesses less than 1nm were grown while avoiding common processing defects such as voids at the substrate-film interface.

引用

页码：131 / +

页数：2

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