Low resistance Ti/Al/Ti-W/Au Ohmic contact to n-GaN for high temperature applications

被引：11

作者：

Fernandez, S. ^{[1
]}

Pena, R. ^{[1
]}

Rodrigo, M. T. ^{[1
]}

Plaza, J. ^{[1
]}

Verdu, M. ^{[1
]}

Sanchez, F. J. ^{[1
]}

Montojo, M. T. ^{[1
]}

机构：

[1] Ctr Invest & Desarrollo Armada, Dept Invest, Madrid 28033, Spain

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 08期

关键词：

D O I：

10.1063/1.2539670

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metallization schemes consisting of titanium/aluminum/titanium-tungsten/gold (Ti/Al/Ti-W/Au) were developed to Ohmic contact formation to n-GaN. The effect of Ti-W as a diffusion barrier layer on electrical and microstructural contact behaviors was evaluated. Regarding the electrical properties, excellent Ohmic contact resistances were obtained at the relatively low annealing temperature of 750 degrees C, showing values as low as 0.29 +/- 0.01 Omega mm. Intermetallic reactions formed during Ohmic contact annealing were investigated by energy dispersion spectroscopy. "Donutlike" features appeared on the surface showing a dependence of the size/density with the Ti-W layer thickness and the alloying conditions. (c) 2007 American Institute of Physics.

引用

页数：3

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