Optically Active Defects at the SiC/SiO2 Interface

被引：25

作者：

Johnson, B. C. ^{[1
]}

Woerle, J. ^{[2
,3
]}

Haasmann, D. ^{[4
]}

Lew, C. T-K ^{[1
]}

Parker, R. A. ^{[1
]}

Knowles, H. ^{[5
,6
]}

Pingault, B. ^{[5
]}

Atature, M. ^{[5
]}

Gali, A. ^{[7
,8
]}

Dimitrijev, S. ^{[4
]}

Camarda, M. ^{[2
,3
]}

McCallum, J. C. ^{[9
]}

机构：

[1] Univ Melbourne, Ctr Quantum Comp & Commun Technol, Sch Phys, Melbourne, Vic 3010, Australia

[2] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

[3] Swiss Fed Inst Technol, Adv Power Semicond Lab, Phy Str 3, CH-8092 Zurich, Switzerland

[4] Griffith Univ, Queensland Micro & Nanotechnol Ctr, Brisbane, Qld 4111, Australia

[5] Univ Cambridge, Cavendish Lab, Atom Mesoscop & Opt Phys Grp, Cambridge CB3 0HE, England

[6] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[7] Hungarian Acad Sci, Wigner Res Ctr Phys, Inst Solid State Phys & Opt, POB 49, H-1525 Budapest, Hungary

[8] Budapest Univ Technol & Econ, Dept Atom Phys, Budafoki Ut 8, H-1111 Budapest, Hungary

[9] Univ Melbourne, Sch Phys, Melbourne, Vic 3010, Australia

来源：

PHYSICAL REVIEW APPLIED | 2019年 / 12卷 / 04期

基金：

澳大利亚研究理事会;

关键词：

SHALLOW ELECTRON TRAPS; SILICON-CARBIDE; STATE DENSITY; PASSIVATION; SIO2;

D O I：

10.1103/PhysRevApplied.12.044024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The SiC/SiO2 interface is a central component of many SiC electronic devices. Defects intrinsic to this interface can have a profound effect on their operation and reliability. It is therefore crucial to both understand the nature of these defects and develop characterization methods to enable optimized SiC-based devices. Here we make use of confocal microscopy to address single SiC/SiO2-related defects and show the technique to be a noncontact, nondestructive, spatially resolved and rapid means of assessing thequality of the SiC/SiO2 interface. This is achieved by a systematic investigation of the defect density of the SiC/SiO2 interface by varying the parameters of a nitric oxide passivation anneal after oxidation. Standard capacitance-based characterization techniques are used to benchmark optical emission rates and densities of the optically active SiC/SiO2-related defects. Further insight into the nature of these defects is provided by low-temperature optical measurements on single defects.

引用

页数：7

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