Preparation and Properties of Ba(Zr0.2Ti0.8)O3 Thin Films by Chemical Solution Deposition

被引：2
|
作者：
Maiwa, Hiroshi [1 ]
Ohashi, Kohei [1 ]
Hayashi, Takashi [1 ]
机构：
[1] Shonan Inst Technol, Fujisawa, Kanagawa 2518511, Japan
来源：
FERROELECTRICS | 2009年 / 381卷
关键词：
Ba(Zr0.2Ti0.8)O-3; relaxor; chemical solution deposition; tunability; ELECTROMECHANICAL PROPERTIES; RELAXOR BEHAVIOR; CERAMICS;
D O I：
10.1080/00150190902869665
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ba(Zr0.2Ti0.8)O-3 (BZT) thin films are prepared on Pt/Ti/SiO2/Si and Pt/TiO2/SiO2/Si substrates by chemical solution deposition using the alkoxide-hydroxide method. The use of the Pt/TiO2/SiO2/Si substrate is effective in promoting grain growth. The BZT film on the Pt/TiO2/SiO2/Si substrate exhibits a high permittivity of 1080 and a tunability under 400 kV/cm of 84%. The temperature dependence of the electrical properties of the BZT thin films was investigated. Temperature dependences of the permittivity are mild. The effective piezoelectric coefficient at room temperature estimated from the slope of the field-induced displacement loop is 35 pm/V.
引用
收藏
页码：67 / 73
页数：7
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