Vertically Stacked Silicon Nanowire Photodetectors for Spectral Reconstruction

被引:0
|
作者
Meng, Jiajun [1 ]
Cadusch, Jasper J. [1 ]
Crozier, Kenneth B. [1 ,2 ]
机构
[1] Univ Melbourne, Dept Elect & Elect Engn, Melbourne, Vic 3010, Australia
[2] Univ Melbourne, Sch Phys, Melbourne, Vic 3010, Australia
来源
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2019年
基金
澳大利亚研究理事会;
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We experimentally demonstrate the use of vertically stacked silicon nanowire photodetectors for computational spectral reconstruction at visible wavelengths. The method is based on the photodetectors having tailored responsivity spectra, achieved by standard nanofabrication processes. (c) 2019 The Author(s)
引用
收藏
页数:2
相关论文
共 50 条
  • [41] Modeling of silicon stacked nanowire and nanosheet transistors at high temperatures
    Cerdeira, Antonio
    Estrada, Magali
    Mariniello Da Silva, Genaro
    Calcade Rodrigues, Jaime
    Pavanello, Marcelo A.
    2022 IEEE LATIN AMERICAN ELECTRON DEVICES CONFERENCE (LAEDC), 2022,
  • [42] Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs
    van Dal, M. J. H.
    Vellianitis, G.
    Doornbos, G.
    Duriez, B.
    Holland, M. C.
    Vasen, T.
    Afzalian, A.
    Chen, E.
    Su, S. K.
    Chen, T. K.
    Shen, T. M.
    Wu, Z. Q.
    Diaz, C. H.
    2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2018,
  • [43] Methodology to separate channel conductions of two level vertically stacked SOI nanowire MOSFETs
    Paz, Bruna Cardoso
    Casse, Mikael
    Barraud, Sylvain
    Reimbold, Gilles
    Vinet, Maud
    Faynot, Olivier
    Pavanello, Marcelo Antonio
    SOLID-STATE ELECTRONICS, 2018, 149 : 62 - 70
  • [44] Vertically Stacked and Independently Controlled Twin-Gate MOSFETs on a Single Si Nanowire
    Li, Xiang
    Chen, Zhixian
    Shen, Nansheng
    Sarkar, Deblina
    Singh, Navab
    Banerjee, Kaustav
    Lo, Guo-Qiang
    Kwong, Dim-Lee
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (11) : 1492 - 1494
  • [45] Vertically Stacked MoSe2/MoO2 Nanolayered Photodetectors with Tunable Photoresponses
    Wazir, Nasrullah
    Liu, Ruibin
    Ding, Chunjie
    Wang, Xianshuang
    Ye, Xin
    Xie Lingling
    Lu, Tianqi
    Wei, Li
    Zou, Bingsuo
    ACS APPLIED NANO MATERIALS, 2020, 3 (08) : 7543 - 7553
  • [46] Printable Organic Photodetectors With Gain Toward High-Performance Vertically Stacked Color Sensors
    Nasrollahi, Bahareh
    Jailani, Javith Mohammed
    Zhao, Ting
    Pecunia, Vincenzo
    IEEE Journal on Flexible Electronics, 2023, 2 (04): : 285 - 292
  • [47] Results of an international comparison of spectral responsivity of silicon photodetectors
    Kohler, R
    Goebel, R
    Pello, R
    METROLOGIA, 1996, 32 (06) : 463 - 468
  • [48] Interpolation of the spectral responsivity of silicon photodetectors in the near ultraviolet
    Kübarsepp, Toomas
    Kärhä, Petri
    Ikonen, Erkki
    Applied Optics, 2000, 39 (01): : 9 - 15
  • [49] ULTRA-HIGH RESPONSIVITY, SILICON NANOWIRE PHOTODETECTORS FOR RETINAL PROSTHESIS
    Lee, S.
    Jung, S. W.
    Park, S.
    Ahn, J.
    Hong, S. J.
    Yoo, H. J.
    Lee, M. H.
    Cho, D-, I
    2012 IEEE 25TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS), 2012,
  • [50] Silicon nanowire photodetectors made by metal-assisted chemical etching
    Xu, Ying
    Ni, Chuan
    Sarangan, Andrew
    NANOENGINEERING: FABRICATION, PROPERTIES, OPTICS, AND DEVICES XIII, 2016, 9927