The effect of diborane additive on the plasma-chemical properties of deposited carbon films

被引:3
|
作者
Shubina, E. N. [1 ]
Karasev, P. A. [1 ]
Titov, A. I. [1 ]
Podsvirov, O. A. [1 ]
Vinogradov, A. Ya. [2 ]
Karasev, N. N. [3 ]
Pozdnyakov, A. V. [1 ]
机构
[1] Peter Great St Petersburg Polytech Univ, St Petersburg 195251, Russia
[2] Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] St Petersburg Natl Res Univ Informat Technol Mech, St Petersburg ITMO Univ, St Petersburg 197101, Russia
关键词
RESIDUAL-STRESS; BORON-CARBIDE;
D O I
10.1134/S1063785017010114
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present the results of studies of the optical, electrical, and mechanical properties of diamondlike carbon films prepared by plasma-chemical vapor deposition from a mixture of methane and diborane in various proportions. Upon reaching the threshold concentration (similar to 12%) of diborane in the mixture, inclusions of a new phase start to form in the structure of the films. This leads to nonlinear dependence of the interior stresses and the surface resistance of coatings on the composition of the mixture with minimum values corresponding to a diborane concentration of about 12%.
引用
收藏
页码:81 / 84
页数:4
相关论文
共 50 条
  • [21] Structural, Mechanical and Optical Properties of Plasma-chemical Si-C-N Films
    Kozak, A. O.
    Ivashchenko, V. I.
    Porada, O. K.
    Ivashchenko, L. A.
    Tomila, T. V.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2014, 6 (04)
  • [22] The surface structure of carbon films deposited by different plasma chemical methods
    Mitura, S
    Mitura, E
    Niedzielski, P
    Dluzniewski, M
    Staryga, E
    Der-Sahaguian, S
    Zak, J
    Sokolowska, A
    Szmidt, J
    Stanishevsky, A
    DIAMOND BASED COMPOSITES AND RELATED MATERIALS, 1997, 38 : 219 - 228
  • [23] A study of the effect of the structure of plasma-chemical silicon nitride on its masking properties
    V. I. Garmash
    V. I. Egorkin
    V. E. Zemlyakov
    A. V. Kovalchuk
    S. Yu. Shapoval
    Semiconductors, 2015, 49 : 1727 - 1730
  • [24] A study of the effect of the structure of plasma-chemical silicon nitride on its masking properties
    Garmash, V. I.
    Egorkin, V. I.
    Zemlyakov, V. E.
    Kovalchuk, A. V.
    Shapoval, S. Yu.
    SEMICONDUCTORS, 2015, 49 (13) : 1727 - 1730
  • [25] Determination of the mechanical properties of carbon films deposited by a pulsed carbon plasma technique
    Bulanenko, VF
    Pirusskii, MV
    Inkin, VN
    Kirpilenko, GG
    Kirpilenko, MG
    Kolpakov, AY
    Maslov, AI
    INDUSTRIAL LABORATORY, 1999, 65 (07): : 449 - 451
  • [26] Effect of nitrogen flow on the properties of carbon nitride films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition
    Lin, Sixu
    Xie, Dong
    Tang, Yongliang
    Wang, Yiwen
    Jing, Fengjuan
    Huang, Nan
    Leng, Yongxiang
    VACUUM, 2021, 189
  • [27] Plasma-Chemical Synthesis of Ytterbium Doped As–S Thin Films
    L. A. Mochalov
    M. A. Kudryashov
    A. A. Logunov
    Yu. P. Kudryashova
    V. M. Malyshev
    P. N. Drozdov
    A. V. Kovalev
    V. M. Vorotyntsev
    Plasma Chemistry and Plasma Processing, 2021, 41 : 1661 - 1670
  • [28] Plasma deposited boronized carbon films
    Sharapov, V.M.
    Kanaev, A.I.
    Zakharov, A.P.
    Gorodetsky, A.E.
    Journal of Nuclear Materials, 1992, 191-94 (pt A) : 508 - 511
  • [29] Physical properties of chemical vapour deposited nanostructured carbon thin films
    Mahadik, D. B.
    Shinde, S. S.
    Bhosale, C. H.
    Rajpure, K. Y.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (05) : 1418 - 1423
  • [30] Evolution of structural and optical properties of nanostructured silicon carbon films deposited by plasma enhanced chemical vapour deposition
    Ambrosone, G.
    Basa, D. K.
    Coscia, U.
    Passacantando, M.
    THIN SOLID FILMS, 2012, 520 (15) : 4875 - 4879