All-dielectric multifunctional transmittance-tunable metasurfaces based on guided-mode resonance and ENZ effect

被引:13
作者
Qiu, Xiaoming [1 ]
Shi, Jian [1 ]
Li, Yanping [1 ]
Zhang, Fan [1 ]
机构
[1] Peking Univ, Dept Elect, Frontiers Sci Ctr Nanooptoelect, State Key Lab Adv Opt Commun Syst & Networks, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
metasurface; guided-mode resonance (GMR); epsilon-near-zero (ENZ); indium tin oxide (ITO); electro-optical materials; all-dielectric; INDIUM TIN OXIDE; BROAD-BAND; WAVE-GUIDE; POLARIZATION; PHASE; MODULATOR; LIGHT; PLATE; FILMS;
D O I
10.1088/1361-6528/abc3e5
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Electrically tunable metasurfaces open new doors for manipulating the phase, amplitude and polarization of light in ultrathin layers. Compared with metal assisted metasurfaces, all-dielectric transmission metasurfaces-with outstanding feature of low loss, especially incorporating with new electro-optical materials-show great potential for the next generation flat optics. In this study, by combining the epsilon-near-zero effect in indium tin oxide (ITO) with guided-mode resonance, we propose novel electrically tunable all-dielectric metasurface architectures with versatile functions for widespread potential application. The inserted periodic ITO and hafnium oxide layers sandwiched in silicon act as two metal-oxide-semiconductor capacitors in a single period to disturb the resonance wavelength in the near-infrared spectral range under the voltage applied. For the one-dimensional structure, the transmittances of this metasurface at 1512 and 1510 nm change 20 and -14 dB under 0 similar to 5 V bias voltage, respectively. In addition, the bilayer structure performs well in double-waveband applications, indicating that more layers can support more operation wavebands. Meanwhile, the two-dimensional structure works as a polarization insensitive device when setting the same structural parameters in both orthogonal directions. The proposed architecture, with various merits including ultra-compact size, high-speed and complementary metal-oxide-semiconductor compatibility, provides a multifunctional and multi-degree-of-freedom design, as well as enormous potential applications in more complicated flat optics.
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页数:9
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