A W -Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques

被引:22
作者
Teppati, Valeria [1 ]
Benedickter, Hansruedi [1 ]
Marti, Diego [1 ]
Garelli, Marco [1 ,2 ]
Tirelli, Stefano [1 ]
Loevblom, Rickard [1 ]
Flueckiger, Ralf [1 ]
Alexandrova, Maria [1 ]
Ostinelli, Olivier [1 ]
Bolognesi, Colombo R. [1 ]
机构
[1] ETH, Millimeter Wave Elect MWE Grp, CH-8092 Zurich, Switzerland
[2] High Frequency Engn HFE Sagl, CH-6534 San Vittore, Switzerland
基金
瑞士国家科学基金会;
关键词
Active devices; active-device measurements; load-pull; nonlinear measurements; transistor measurement;
D O I
10.1109/TMTT.2013.2292042
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new W -band active load-pull system is presented. It is the first load-pull system to implement a 94 GHz load by means of an active loop exploiting frequency conversion techniques. The active loop configuration demonstrates a number of advantages that overcome the typical limitations of W -band passive tuners or conventional active open-loop techniques in a cost-effective way: load reflection coefficients Gamma(L) as high as 0.95 in magnitude can be achieved at 94 GHz, thus providing a nearly full coverage of the Smith chart. Possible applications of the setup include technology assessment, large-signal device model verification at sub-terahertz frequencies, and W -band monolithic microwave integrated circuit design and characterization. The availability of direct and accurate load-pull measurements at -band should prove an asset in the development of sub-terahertz integrated circuits. First measurements performed on high-performance InP double heterojunction bipolar transistors and GaN high electron-mobility transistors are presented.
引用
收藏
页码:148 / 153
页数:6
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