Electrical properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN metal-insulator-semiconductor (MIS) structure

被引：29

作者：

Reddy, V. Rajagopal ^{[1
,2
]}

Janardhanam, V. ^{[3
]}

Ju, Jin-Woo ^{[4
]}

Hong, Hyobong ^{[5
]}

Choi, Chel-Jong ^{[2
,3
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

[2] Chonbuk Natl Univ, SPRC, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

[3] Chonbuk Natl Univ, Dept BIN Fusion Technol, Jeonju 561756, South Korea

[4] Korea Photon Technol Inst, LED Device Res Ctr, Kwangju 500779, South Korea

[5] Elect & Telecommun Res Inst, IT Convergence Technol Res Lab, Taejon 305700, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2014年 / 29卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

Bi0.5Na0.5TiO3-BaTiO3 dielectric layer; n-type GaN; electrical properties; interface state density; conduction mechanism; C-V CHARACTERISTICS; THIN-FILMS; SCHOTTKY; DIODES; STATES; PARAMETERS; LAYER;

D O I：

10.1088/0268-1242/29/7/075001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the electrical properties of solution processed high-k Bi0.5Na0.5TiO3(BNT)-BaTiO3(BT) on n-GaN with Au electrode. Higher barrier height is obtained for Au/BNT-BT/n-GaN structure compared to Au/n-GaN structure. Thin interfacial layer is formed in between BNT-BT and n-GaN confirmed by TEM results. The interface state density of Au/BNT-BT/n-GaN structure is lower than that of Au/n-GaN structure due to the existence of interfacial layer (Ga-O) at the interface. It is observed that the frequency dispersion is decreased in the Au/BNT-BT/n-GaN structure. Poole-Frenkel mechanism is found to dominate the reverse leakage current in both Au/n-GaN and Au/BNT-BT/n-GaN structures.

引用

页数：6

共 32 条

[1] Ferroelectric and piezoelectric properties of lead-free BaTiO3 doped Bi0.5Na0.5TiO3 thin films from metal-organic solution deposition [J].