A study of the coupling between LO phonons and plasmons in InP p-i-n diodes

被引：1

作者：

Dinh Nhu Thao ^{[1
,2
]}

机构：

[1] Duy Tan Univ, K7-25 Quang Trung St, Danang City, Vietnam

[2] Hue Univ, Coll Educ, 34 Le Loi St, Hue City, Vietnam

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 103卷

关键词：

Collective oscillations; Coupling; LO phonon; Plasmon; THz emission; InP; p-i-n diodes; ELECTRONIC-PROPERTIES; CHARGE-TRANSPORT; THZ RADIATION; GAAS; SEMICONDUCTORS; EMISSION; SYSTEMS; FIELD; INAS; INSB;

D O I：

10.1016/j.spmi.2017.01.029

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper reports a study investigating the coupling between longitudinal optical (LO) phonons and plasmons in InP p-i-n diodes by a numerical simulation. A significant change is observed in the Fourier transform spectra of transient electric field when taking the coupling into account. The findings show two separate peaks instead of a single plasma peak as for non-coupling case. In addition, the bulk-like dispersion relations of the frequencies of those two peaks on the carrier density are found. Therefore, it is proposed that those behaviors manifest the LO phonon-plasmon coupling in the diodes. Also, there is evidence of the peak clipping by the diode itself, a phenomenon not being seen in the bulk InP semiconductor. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：213 / 220

页数：8

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