Er doped-Si nanostructures coupled with photonic crystals for high enhancement of light extraction

被引:1
|
作者
Miritello, M. [1 ]
Lo Savio, R. [2 ]
Galli, M. [2 ]
Irrera, A. [1 ]
Iacona, F. [1 ]
Franzo, G. [1 ]
Andreani, L. [1 ]
Faolain, L. O' [1 ]
Krauss, T. [3 ]
Priolo, F. [1 ]
机构
[1] Univ Catania, CNR IMM MATIS, Via S Sofia 64, I-95123 Catania, Italy
[2] Univ Pavia, Dipartimento Fis A Volta, I-27100 Pavia, Italy
[3] Univ St Andrews, SUPA, Sch Phys & Astron, St Andrews KY16 9SS, Fife, Scotland
来源
NANOCRYSTAL EMBEDDED DIELECTRICS FOR ELECTRONIC AND PHOTONIC DEVICES | 2013年 / 53卷 / 04期
基金
英国工程与自然科学研究理事会;
关键词
1.54; MU-M; ENERGY-TRANSFER; WAVE-GUIDE; 1.54-MU-M LUMINESCENCE; OPTICAL-PROPERTIES; THIN-FILMS; SILICON; EMISSION; NANOCRYSTALS; GAIN;
D O I
10.1149/05304.0071ecst
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Silicon nanophotonics is emerging as a new platform for integration of photonic and electronic devices. Examples on our recent efforts on monolithic light sources in silicon-on-insulator (SOI) are reported. A first example was an active slot waveguide integrated with a photonic crystal (PhC), containing as emitting centers Er-doped Si nanoclusters. Simultaneous inhibition and redistribution of light emission have permitted to obtain an Er3+ emission enhancement when the involved transition is in resonance with a mode of the PhC slab both under optical and electrical excitation. Moreover Y-Er disilicate thin films have been proposed in order to overcome the limit of Er solubility. Further this film is integrated with a PhC cavity, by demonstrating that Er luminescence at 1.54. mu m is enhanced by coupling with the cavity modes. These results indicate that this is a promising method for achieving a gain materials at 1.54 mu m on a Si platform.
引用
收藏
页码:71 / 80
页数:10
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