Growth of low defect-density InP on exact Si (001) substrates by metalorganic chemical vapor deposition with position-controlled seed arrays

被引：0

作者：

Li, Qiang ^{[1
]}

Tang, Chak Wah ^{[1
]}

Lau, Kei May ^{[1
]}

Hill, Richard ^{[2
]}

Vert, Alexey ^{[2
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

[2] SEMATECH, Albany, NY 12203 USA

来源：

26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Growth of InP with high crystalline quality on exact Si (001) substrates is reported. InP seed arrays were deposited in 30 nm-wide SiO2 trenches along the [1 -1 0] direction on Si substrates. Coalesced InP films were regrown on the seed layer arrays after removal of the SiO2 mask. Cross-sectional transmission electron microscopy shows anisotropic distribution of defects along the [1 1 0] and [1 -1 0] directions. From x-ray diffraction measurement, full-width-at-half-maximum as small as 78 arcsec has been achieved from 2.3 mu m InP in a coupled omega/2 theta scan.

引用

页数：2

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