Electrical-optical analysis of a GaN/sapphire LED chip by considering the resistivity of the current-spreading layer

被引：22

作者：

Chen, Jyh-Chen ^{[1
]}

Sheu, Gwo-Jiun ^{[1
]}

Hwu, Farn-Shiun ^{[1
,2
]}

Chen, Hsueh-I ^{[1
]}

Sheu, Jinn-Kong ^{[3
,4
]}

Lee, Tsung-Xian ^{[5
]}

Sun, Ching-Cherng ^{[5
]}

机构：

[1] Natl Cent Univ, Dept Mech Engn, Jhongli 32001, Taiwan

[2] Nanya Inst Technol, Dept Engn Mech, Jhongli 32001, Taiwan

[3] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan

[4] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[5] Natl Cent Univ, Inst Opt Sci, Jhongli 32001, Taiwan

来源：

OPTICAL REVIEW | 2009年 / 16卷 / 02期

关键词：

current-spreading; light-emitting diodes; indium tin oxide; numerical simulation; light extraction efficiency; LIGHT-EMITTING-DIODES; EXTRACTION; DESIGN;

D O I：

10.1007/s10043-009-0039-y

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The effects of current distribution in LED chips on the electrical potential and optical light extraction efficiency are investigated by a numerical simulation. The results show that when the resistivity of the current-spreading layer is decreased there is current-crowding near the n-contact. On the other hand, when the resistivity in the current-spreading layer increases, there is current-crowding near the p-contact. When the current is crowded near the n-contact due to less resistivity of the current-spreading layer, the input power is lower because of the smaller series resistance in the chip, and the light extraction efficiency is higher since the shadowing effect of the p-contact can be avoided. For L (p) = 50 mu m in this study, the light extraction efficiency at rho (ITO) = 0.1 x 10(-3) Omega center dot cm is 1.4 times better than that when L (p) = 100 mu m, even though the driving voltage is raised 1.02 times.

引用

页码：213 / 215

页数：3

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