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Ni/SiO2 Catalyst Prepared by Strong Electrostatic Adsorption for a Low-Temperature Methane Dry Reforming Reaction
被引:92
作者:
Wang, Fagen
[1
,3
,4
]
Han, Kaihang
[1
]
Xu, Leilei
[2
]
Yu, Hao
[5
]
Shi, Weidong
[1
]
机构:
[1] Jiangsu Univ, Sch Chem & Chem Engn, Zhenjiang 212013, Jiangsu, Peoples R China
[2] Nanjing Univ Informat Sci & Technol, Collaborat Innovat Ctr Atmospher Environm & Equip, Sch Environm Sci & Engn, Jiangsu Key Lab Atmospher Environm Monitoring & P, Nanjing 210044, Peoples R China
[3] Qingdao Univ Sci & Technol, Shandong Key Lab Biochem Anal, Qingdao 266042, Peoples R China
[4] Qingdao Univ Sci & Technol, Coll Chem & Mol Engn, Qingdao 266042, Peoples R China
[5] Shandong Univ Sci & Technol, Coll Chem & Environm Engn, Qingdao 266590, Peoples R China
基金:
中国国家自然科学基金;
关键词:
METAL-SUPPORT INTERACTION;
CARBON-DIOXIDE;
SYNGAS PRODUCTION;
CO2;
SILICA;
MECHANISM;
CH4;
STABILITY;
OXIDATION;
EFFICIENT;
D O I:
10.1021/acs.iecr.0c06020
中图分类号:
TQ [化学工业];
学科分类号:
0817 ;
摘要:
Low-temperature methane dry reforming (MDR) over supported Ni catalysts is a more economical way to convert greenhouse gases than high-temperature MDR. However, sintering from Ni aggregation and carbon deposition from deep cracking of CH4 caused catalyst deactivation. In this study, we synthesized a supported Ni/SiO2-E catalyst by strong electrostatic adsorption for low-temperature MDR (673-773 K). Experimental results showed that the Ni/SiO2-E catalyst exhibited higher performance on using low-temperature MDR than the Ni/SiO2-I catalyst prepared by the conventional impregnation method. From characterizations of X-ray diffraction (XRD), transmission electron microscopy (TEM), hydrogen temperature-programmed reduction (H-2-TPR), etc. in fresh catalysts and used catalysts, the excellent stable performance of MDR over the Ni/SiO2-E catalyst was associated with the smaller Ni size and the stronger Ni-SiO2 interaction. The former contributed to less formation of carbon deposits and the latter resulted in hardly any sintering of Ni nanoparticles.
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页码:3324 / 3333
页数:10
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