Cantilever-type microelectromechanical systems probe card with through-wafer interconnects for fine pitch and high-speed testing

被引:24
作者
Kim, BH
Kim, HC
Chun, K
Ki, J
Tak, Y
机构
[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151744, South Korea
[2] Seoul Natl Univ, ISRC, IC MEMS Inc, Seoul 151742, South Korea
[3] Inha Univ, Dept Chem Engn, Inchon 402752, South Korea
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 6B期
关键词
MEMS probe card; through-wafer interconnection; contact resistance;
D O I
10.1143/JJAP.43.3877
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new microelectromechanical systems (MEMS) probe card made of electroplated nickel cantilevers, which has compliant structure, with through-wafer interconnections for IC testing is developed. The measured contact resistance was less than 0.5 ohm and leakage current was approximately 0.13 nA between tips and pads. In addition, planarity of tips and the alignment of x- and y-axes were satisfied with conventional needle probe card performance. Therefore, this probe card is suitable for wafer-level burn-in testing and function testing of memory and RF devices. In particular, since through-wafer interconnection can offer the shortest signal line path and reduce signal delay, it is possible to implement fine pitch and high-speed devices. The probe was fabricated with the 4-inch silicon substrate.
引用
收藏
页码:3877 / 3881
页数:5
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