Growth and characterization of bismuth and antimony thin films

被引：6

作者：

Martinez, A ^{[1
]}

Collazo, R ^{[1
]}

Berrios, AR ^{[1
]}

Ducoudray, GO ^{[1
]}

机构：

[1] UNIV PUERTO RICO,MAT RES CTR,RIO PIEDRAS,PR 00931

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 174卷 / 1-4期

关键词：

hot-wall epitaxy; bismuth; antimony; thin films;

D O I：

10.1016/S0022-0248(97)00042-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A modified hot-wall epitaxy evaporator was used to deposit Bi and Sb thin films onto (111)-oriented Si substrates. Auger electron spectra were taken to establish the purity of the films. X-ray diffraction measurements indicate that the films were polycrystalline and displayed a preferential orientation about the (111) axis in a direction perpendicular to the film plane depending on the substrate temperature during growth.

引用

页码：845 / 850

页数：6

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