Effect of GaAs polycrystal on the size and areal density of InAs quantum dots in selective area molecular beam epitaxy

被引：2

作者：

Lin, J. C.

Hogg, R.

Fry, P.

Hopkinson, M.

Ross, I.

Cullis, A.

Kolodka, R.

Tartakovskii, A.

Skolnick, M.

机构：

[1] Univ Sheffield, EPSRC Natl Ctr III V Technol, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 297卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

molecular beam epitaxy; polycrystalline deposition; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2006.09.027

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Selective growth of self-assembled InAs/GaAs quantum dots (QDs) is achieved by molecular beam epitaxy (MBE) utilizing dielectric masks on GaAs substrates. We find that polycrystalline deposits on the mask due to non-ideal growth selectivity between the mask and the epitaxy induce a significant modification of the QD height and areal density in their neighborhood. The results show an effective method to achieve selective area QD growth by using a dielectric mask and altering the degree of selectivity through control over the MBE growth conditions in a pulsed deposition mode. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：38 / 43

页数：6

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