Preparation of (n)a-Si:H/(p)c-Si heterojunction solar cells

被引：30

作者：

Borchert, D

Grabosch, G

Fahrner, WR

机构：

[1] University of Hagen, Chair of Electronic Devices, D-58084 Hagen

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1997年 / 49卷 / 1-4期

关键词：

heterojunction solar cells; single crystalline silicon substrates;

D O I：

10.1016/S0927-0248(97)00175-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Heterojunction solar cells have been manufactured by depositing n-type a-Si:H on p-type 1-2 Omega cm CZ single crystalline silicon substrates. Although our cell structure is very simple - neither a BSF nor a surface texturing is used - a conversion efficiency of 13.1% has been achieved on an area of 1 cm(2). In this paper the technology is described and the dependence of the solar cell parameters on the properties of the n-type a-Si:H layer is discussed. It is shown that this cell type exhibits no degradation under light exposure.

引用

页码：53 / 59

页数：7