Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet

被引：24

作者：

Chen, Yuanjie ^{[1
,2
]}

Huang, Shaoyun ^{[1
,2
]}

Pan, Dong ^{[3
,4
]}

Xue, Jianhong ^{[1
,2
]}

Zhang, Li ^{[1
,2
]}

Zhao, Jianhua ^{[3
,4
]}

Xu, H. Q. ^{[1
,2
,4
]}

机构：

[1] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing Key Lab Quantum Devices, Beijing 100871, Peoples R China

[2] Peking Univ, Dept Elect, Beijing 100871, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China

[4] Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China

来源：

NPJ 2D MATERIALS AND APPLICATIONS | 2021年 / 5卷 / 01期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1038/s41699-020-00184-y

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin-orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin-orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin-orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.

引用

页数：8

共 55 条

[1] Milestones Toward Majorana-Based Quantum Computing [J].