Free-carrier grating and terahertz generation from InN n+nn+ structures under streaming plasma instability

被引：18

作者：

Gruzinskis, V

Shiktorov, P

Starikov, E

Reggiani, L

Varani, L

Vaissière, JC

机构：

[1] Inst Semicond Phys, LT-2600 Vilnius, Lithuania

[2] Univ Lecce, INFM, Natl Nanotechnol Lab, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy

[3] Univ Montpellier 2, CNRS, UMR 5507, Ctr Electron & Microoptoelectron Montpellier, F-34095 Montpellier 5, France

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 04期

关键词：

D O I：

10.1088/0268-1242/19/4/060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron transport in 3 mum long InN n(+)nn(+) structures is theoretically investigated by the Monte Carlo particle technique at low lattice temperatures when optical phonon emission is the dominating scattering mechanism. It is shown that at constant bias a free-carrier grating can be formed inside the n-region. Such a grating is found to be responsible for microwave power generation in the THz frequency range.

引用

页码：S173 / S175

页数：3

共 11 条

[1] CURRENT-DRIVEN PLASMA INSTABILITIES IN LOWER-DIMENSIONAL SYSTEMS [J].