High-Frequency Scalable Modeling and Analysis of a Differential Signal Through-Silicon Via

被引：54

作者：

Kim, Joohee ^{[1
]}

Cho, Jonghyun ^{[1
]}

Kim, Joungho ^{[1
]}

Yook, Jong-Min ^{[2
]}

Kim, Jun Chul ^{[2
]}

Lee, Junho ^{[3
]}

Park, Kunwoo ^{[3
]}

Pak, Jun So ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

[2] KETI, Syst Package Res Ctr, Gyeonggi Do 463816, South Korea

[3] Hynix Semicond Inc, Adv Design Team, Div Res & Dev, Gyeonggi Do 467701, South Korea

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2014年 / 4卷 / 04期

关键词：

Differential signal through-silicon via (TSV); scalable model; single-ended signal TSV; three-dimensional; integrated circuit (3-D IC); 3-D; TSV;

D O I：

10.1109/TCPMT.2013.2239362

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An analytic scalable model of a differential signal through-silicon via (TSV) is proposed. This TSV is a groundsignal- signal-ground (GSSG)-type differential signal TSV. Each proposed analytical equation in the model is a function of the structural and material design parameters of the TSV and the bump, which is scalable. The proposed model is successfully validated with measurements up to 20 GHz for the fabricated test vehicles. Additionally, the scalability of the proposed model is verified with simulations by using Ansoft HFSS to vary the design parameters, such as the TSV diameter, pitch between TSVs, and TSV oxide thickness. On the basis of the proposed scalable model, the electrical behaviors of the GSSG-type differential signal TSV are analyzed with respect to the design variations in the frequency domain. Additionally, the electrical performances of a GSSG-type differential signal TSV are evaluated and compared to that of a ground-signal-ground-type single-ended signal TSV, such as insertion loss, characteristic impedance, voltage/ timing margin, and noise immunity.

引用

页码：697 / 707

页数：11

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