Thick Single Grain Silicon Formation with Microsecond Green Laser Crystallization

被引：2

作者：

Arslan, A. ^{[1
]}

Kahlert, H. J. ^{[2
]}

Oesterlin, P. ^{[2
]}

Mofrad, D. T. ^{[1
]}

Ishihara, R. ^{[1
]}

Beenakker, Kees ^{[1
]}

机构：

[1] Delft Univ Technol, Dept Microelect, NL-2628 CT Delft, Netherlands

[2] Innovavent GmbH, D-37085 Gottingen, Germany

来源：

THIN FILM TRANSISTORS 11 (TFT 11) | 2012年 / 50卷 / 08期

关键词：

D O I：

10.1149/05008.0035ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

625 nm thick a-Si layer was crystallized by using microsecond pulsed green laser with wavelength of 515 nm. At least 8 m size grains were formed using location controlled single grain technique at room temperature. Energy density window for crystallization and ablation were compared for pulse durations of 300 ns, 1000 ns and 1200 ns.

引用

页码：35 / 42

页数：8

共 8 条

[1]

Arai Y., 2009, 17 INT C ADV THERM P

[2]

Arslan A., 2011, P SPIE MED IM C ORL, P7961

[3] Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization [J].

Ishihara, R ;

He, M ;

Rana, V ;

Hiroshima, Y ;

Inoue, S ;

Shimoda, T ;

Metselaar, JW ;

Beenakker, CIM .

THIN SOLID FILMS, 2005, 487 (1-2) :97-101

[4]

Ishihara R., 2007, J CRYSTAL GROWTH, V299

[5]

Ishihara R., 2012, SOLID STATE ELECT, V71

[6]

Matsuki N., 2007, P 14 INT DISPL WORKS, V2

[7]

Matsuki N., 2008, APPL PHYS LETT, V93

[8]

Rana VK, THESIS

← 1 →