Czochralski growth of heavily tin-doped Si crystals

被引：2
作者：
Yonenaga, I. [1 ]
Taishi, T. [2 ]
Inoue, K. [1 ]
Gotoh, R. [1 ]
Kutsukake, K. [1 ]
Tokumoto, Y. [1 ]
Ohno, Y. [1 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Shinshu Univ, Fac Engn, Nagano 3808553, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2014年 / 395卷
关键词：
Doping; Segregation; Impurities; Solubility; Czochralski method; Semiconducting silicon; OXYGEN PRECIPITATION; INTERSTITIAL OXYGEN; SILICON; GERMANIUM; DEFECTS; SN;
D O I：
10.1016/j.jcrysgro.2014.02.052
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Heavily tin (So) doped Si crystals in a concentration up to 4 x 1019 cm(-3) were grown by the Czochralski method. Variation of Sn concentration in the crystals was well expressed by the Pfann equation using a segregation coefficient of k=0.016. From the occurrence of growth interface instability and the appearance of Sn precipitates in the grown crystals, the solubility limit of Sn was considered to be around 5 x 10(19) cm(-3). Interstitially dissolved oxygen O-i was presented at a concentration of 8-9 x 10(17) cm(-3) in the grown Sn-doped crystals. The FT-IR absorption peak relating to a Si-O-i-Si quasi-molecule at 1106 cm(-1) showed preferential occupation of 0; at the bond-centered position of Si-Si. The O-i peak shifted to the lower wave number side with increasing Sn concentration in Si, implying expansion of the Si-Si bond. (C) 2014 Elsevier B.V. All rights reserved.
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页码：94 / 97
页数：4
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