Fabrication of BaTiO3P-N junctions by laser molecular beam epitaxy

被引：0
作者：
Lu, HB
Dai, SY
Chen, F
Yan, L
Chen, ZH
Zhou, YL
Yang, GZ
机构：
[1] Chinese Acad Sci, Inst Phys, Lab Opt Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
来源：
FERROELECTRICS | 2002年 / 271卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A series of BaTiO3 p-n junctions have been successfully fabricated including BaTi1-xNbxO3/BaTi1-xInxO3 BaTi1-xInxO3/SrTi1-xNbxO3 by Laser molecular beam epitaxy. Better I-V curves of p-n junctions have been obtained.
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页码：1715 / 1720
页数：6
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