Temperature and light dependent electrical properties of Graphene/n-Si-CH3-terminated solar cells

被引：12

作者：

Brus, V. V. ^{[1
,2
]}

Gluba, M. A. ^{[1
]}

Zhang, X. ^{[1
]}

Hinrichs, K. ^{[3
]}

Rappich, J. ^{[1
]}

Nickel, N. H. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silizium Photovolta, D-12489 Berlin, Germany

[2] Chernivtsi Natl Univ, Dept Elect & Energy Engn, Kotsubinsky Str 2, D-58012 Berlin, Germany

[3] Leibniz Inst Analyt Wissensch ISAS eV, Dept Berlin, D-12489 Berlin, Germany

来源：

SOLAR ENERGY | 2014年 / 107卷

关键词：

Graphene; Methyl group; Surface passivation; Solar cell; GRAPHENE-SILICON; RECOMBINATION; EFFICIENCY; GENERATION; GRAPHITE;

D O I：

10.1016/j.solener.2014.05.021

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The charge transport in Schottky-type solar cells fabricated from graphene/methyl-passivated silicon heterojunctions is studied in detail. The electrical device characteristics are affected by ambient temperature and illumination conditions. Moreover, the presence of deep and shallow interface states influences the current across the junction at forward and reverse bias. In the dark, thermionic emission over the potential barrier is clearly affected by the recombination via interface states, while under illumination those states become electrically inactive. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：74 / 81

页数：8

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