Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD

被引：79
作者：
Chen, Yiren [1 ,3 ]
Song, Hang [1 ]
Li, Dabing [1 ]
Sun, Xiaojuan [1 ]
Jiang, Hong [1 ]
Li, Zhiming [1 ]
Miao, Guoqing [1 ]
Zhang, Zhiwei [1 ]
Zhou, Yue [2 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Appl Opt, Changchun 130033, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100039, Peoples R China
来源：
MATERIALS LETTERS | 2014年 / 114卷
基金：
中国国家自然科学基金;
关键词：
Epitaxial growth; Chemical vapor deposition; Semiconductors; Raman; AlN template; EPITAXY; GAN;
D O I：
10.1016/j.matlet.2013.09.096
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We studied the influence of the growth temperature of AlN nucleation layer (T-NL) on the AlN template grown by high-temperature metal-organic chemical vapor deposition (HT-MOCVD). The AlN templates were characterized by high-resolution X-ray diffractometer, atomic force microscopy and room-temperature Raman scattering spectrometer. The results revealed that the T-NL had a direct influence on the quality of the AlN template. By optimizing the T-NL at 950 degrees C, we obtained a high-quality AlN template with the full width at half maxima for the (0002) and (10-12) planes of 90 '' and 612 '', respectively. The AlN template also presented atomic level step with a root mean square (RMS) roughness of 0.133 nm. In addition, it performed excellent single crystallographic orientation along the c-axis. The growth evolution of AlN nucleation layer at different T-NL was also explained in detail. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：26 / 28
页数：3
相关论文
共 14 条
  • [1] Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy
    Balaji, M.
    Claudel, A.
    Fellmann, V.
    Gelard, I.
    Blanquet, E.
    Boichot, R.
    Pierret, A.
    Attal-Tretout, B.
    Crisci, A.
    Coindeau, S.
    Roussel, H.
    Pique, D.
    Baskar, K.
    Pons, M.
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 526 : 103 - 109
  • [2] The influence of thickness and ammonia flow rate on the properties of AlN layers
    Corekci, S.
    Ozturk, M. K.
    Cakmak, M.
    Ozcelik, S.
    Ozbay, E.
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 15 (01) : 32 - 36
  • [3] Phonon dispersion and Raman scattering in hexagonal GaN and AlN
    Davydov, VY
    Kitaev, YE
    Goncharuk, IN
    Smirnov, AN
    Graul, J
    Semchinova, O
    Uffmann, D
    Smirnov, MB
    Mirgorodsky, AP
    Evarestov, RA
    [J]. PHYSICAL REVIEW B, 1998, 58 (19): : 12899 - 12907
  • [4] Influence of Al/N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy -: art. no. 161901
    Fälth, JF
    Davidsson, SK
    Liu, XY
    Andersson, TG
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (16) : 1 - 3
  • [5] AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN
    Hu, X
    Deng, J
    Pala, N
    Gaska, R
    Shur, MS
    Chen, CQ
    Yang, J
    Simin, G
    Khan, MA
    Rojo, JC
    Schowalter, LJ
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (08) : 1299 - 1301
  • [6] High quality AlGaN solar-blind Schottky photodiodes fabricated on AlN/sapphire template
    Jiang, H.
    Egawa, T.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (12)
  • [7] Novel Solution Growth Method of Bulk AlN Using Al and Li3N Solid Sources
    Kangawa, Yoshihiro
    Toki, Ryutaro
    Yayama, Tomoe
    Epelbaum, Boris M.
    Kakimoto, Koichi
    [J]. APPLIED PHYSICS EXPRESS, 2011, 4 (09)
  • [8] Ultraviolet semiconductor laser diodes on bulk AlN
    Kneissl, Michael
    Yang, Zhihong
    Teepe, Mark
    Knollenberg, Cliff
    Schmidt, Oliver
    Kiesel, Peter
    Johnson, Noble M.
    Schujman, Sandra
    Schowalter, Leo J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)
  • [9] Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
    Lee, SR
    West, AM
    Allerman, AA
    Waldrip, KE
    Follstaedt, DM
    Provencio, PP
    Koleske, DD
    Abernathy, CR
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (24) : 1 - 3
  • [10] Growth conditions and surface morphology of AlN MOVPE
    Lobanova, A. V.
    Yakovlev, E. V.
    Talalaev, R. A.
    Thapa, S. B.
    Scholz, F.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) : 4935 - 4938
12