Towards free-standing graphane: atomic hydrogen and deuterium bonding to nano-porous graphene

被引：15
作者：
Abdelnabi, Mahmoud Mohamed Saad [1 ]
Blundo, Elena [1 ]
Betti, Maria Grazia [1 ,2 ]
Cavoto, Gianluca [1 ,2 ]
Placidi, Ernesto [1 ]
Polimeni, Antonio [1 ]
Ruocco, Alessandro [3 ,4 ]
Hu, Kailong [5 ]
Ito, Yoshikazu [5 ]
Mariani, Carlo [1 ,2 ]
机构：
[1] Sapienza Univ Roma, Dipartimento Fis, Ple Aldo Moro 2, I-00185 Rome, Italy
[2] Sapienza Univ Roma, INFN, Sez Roma 1, Ple Aldo Moro 2, I-00185 Rome, Italy
[3] Univ Roma Tre, Dipartimento Sci, Via Vasca Navale, I-00146 Rome, Italy
[4] Univ Roma Tre, INFN, Sez Roma 3, Via Vasca Navale, I-00146 Rome, Italy
[5] Univ Tsukuba, Grad Sch Pure & Appl Sci, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
来源：
NANOTECHNOLOGY | 2021年 / 32卷 / 03期
关键词：
graphane; nano porous graphene; hydrogenation; deuteration; XPS; Raman; GRAPHITIC CARBON NITRIDE; ELECTROCATALYTIC ACTIVITY; REVERSIBLE HYDROGENATION; ELECTRONIC-PROPERTIES; BAND-GAP; EVOLUTION; NITROGEN; REDUCTION; NANOTUBES; ULTRATHIN;
D O I：
10.1088/1361-6528/abbe56
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Graphane is formed by bonding hydrogen (and deuterium) atoms to carbon atoms in the graphene mesh, with modification from the pure planar sp(2) bonding towards an sp(3) configuration. Atomic hydrogen (H) and deuterium (D) bonding with C atoms in fully free-standing nano porous graphene (NPG) is achieved, by exploiting low-energy proton (or deuteron) non-destructive irradiation, with unprecedented minimal introduction of defects, as determined by Raman spectroscopy and by the C 1s core level lineshape analysis. Evidence of the H- (or D-) NPG bond formation is obtained by bringing to light the emergence of a H- (or D-) related sp(3)-distorted component in the C 1s core level, clear fingerprint of H-C (or D-C) covalent bonding. The H (or D) bonding with the C atoms of free-standing graphene reaches more than 1/4 (or 1/3) at% coverage. This non-destructive H-NPG (or D-NPG) chemisorption is very stable at high temperatures up to about 800 K, as monitored by Raman and x-ray photoelectron spectroscopy, with complete healing and restoring of clean graphene above 920 K. The excellent chemical and temperature stability of H- (and D-) NPG opens the way not only towards the formation of semiconducting graphane on large-scale samples, but also to stable graphene functionalisation enabling futuristic applications in advanced detectors for the beta-spectrum analysis.
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页数：8
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