Near infrared intersubband absorption of CdSe/MgSe quantum wells grown on InP substrate with an InAlAs buffer layer

被引：5

作者：

Chen, Guopeng ^{[1
]}

Zhao, Kuaile ^{[1
]}

Tamargo, Maria C. ^{[2
]}

Shen, Aidong ^{[3
]}

机构：

[1] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA

[2] CUNY City Coll, Dept Chem, New York, NY 10031 USA

[3] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2014年 / 32卷 / 02期

基金：

美国国家科学基金会;

关键词：

OPTICAL-PROPERTIES; CASCADE LASERS; AL0.48IN0.52AS; TEMPERATURE;

D O I：

10.1116/1.4863496

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the growth of MgSe/CdSe quantum well structures on InP substrate with an InAlAs buffer by molecular beam epitaxy. The sample maintained zincblende crystal structure during the growth with good surface and interface quality as indicated by in-situ reflection high-energy electron diffraction. Structural and optical properties of the sample were characterized by high-resolution x-ray diffraction and photoluminescence measurements. Clear near infrared intersubband transition at 1.79 mu m is observed. Calculations suggest that with strain-compensated MgSe/ZnSe/CdSe coupled quantum wells intersubband absorption at the optical communication wavelength 1.55 mu m can be achieved. (C) 2014 American Vacuum Society.

引用

页数：4

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