Green Light-Emitting Phases Induced by Al Addition in Full-Color Ba3MgSi2O8:Eu2+,Mn2+ Phosphor for White-Light-Emitting Diodes

被引：9

作者：

Wang, Da-jian ^{[1
]}

Liu, Ling-yun

机构：

[1] Tianjin Univ Technol, Lab Display Mat & Photoelect Devices, Minist Educ, Tianjin 300384, Peoples R China

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 05期

基金：

中国国家自然科学基金;

关键词：

aluminium; barium compounds; europium; gallium compounds; III-V semiconductors; light emitting diodes; magnesium compounds; manganese; phosphors; photoluminescence; wide band gap semiconductors; PHOTOLUMINESCENT PROPERTIES; LUMINESCENT PROPERTIES; OPTICAL-PROPERTIES; CRYSTAL-STRUCTURE; MN2+ PHOSPHOR; BA3MGSI2O8-EU2+; EXCITATION; EMISSION; BAAL2O4; EU2+;

D O I：

10.1149/1.3086729

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Through previous findings of green-light-emitting Ba2SiO4 phase in full-color Ba3MgSi2O8:Eu2+,Mn2+ phosphor for near-UV GaN-based white-light-emitting diodes, we present a route to compensate green band emission for full-color band emission by intentionally adding Al ion to promote the formation of green-light-emitting Ba2SiO4 and BaAl2O4 phases in Ba3MgSi2O8. The variation of Al-added amount leads to amount change of each phase in the mixed phases and adjustable energy transfer of Eu-Mn on sites in different hosts of phases are verified, consequently full-color band emission could be achieved in the potential application of white light.

引用

页码：H179 / H181

页数：3

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