Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors

被引：44
作者：
Hjalmarson, Harold P. [1 ]
Pease, Ronald L. [2 ]
Devine, Roderick A. B. [3 ]
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
[2] RLP Res, Los Lunas, NM 87031 USA
[3] EMRTC NMT, Socorro, NM 87801 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 06期
关键词：
Bimolecular reaction; bipolar junction transistor; cracking; dimerization; dose rate; ELDRS; excess base current; hole; hydrogen; interface trap; kinetics; proton; radiation; recombination; silicon dioxide;
D O I：
10.1109/TNS.2008.2007487
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Mechanisms for dose-rate dependent effects of ionizing radiation are described. Bimolecular mechanisms are shown to produce reduced effects at high dose rates. Calculations using, such mechanisms are shown to produce good agreement with data from devices affected by enhanced low dose-rate sensitivity (ELDRS).
引用
收藏
页码：3009 / 3015
页数：7
相关论文
共 45 条
[11]   RESPONSE OF ADVANCED BIPOLAR PROCESSES TO IONIZING-RADIATION [J].
ENLOW, EW ;
PEASE, RL ;
COMBS, W ;
SCHRIMPF, RD ;
NOWLIN, RN .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) :1342-1351
[12]   Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides [J].
Fleetwood, DM ;
Riewe, LC ;
Schwank, JR ;
Witczak, SC ;
Schrimpf, RD .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (06) :2537-2546
[13]   PHYSICAL-MECHANISMS CONTRIBUTING TO ENHANCED BIPOLAR GAIN DEGRADATION AT LOW-DOSE RATES [J].
FLEETWOOD, DM ;
KOSIER, SL ;
NOWLIN, RN ;
SCHRIMPF, RD ;
REBER, RA ;
DELAUS, M ;
WINOKUR, PS ;
WEI, A ;
COMBS, WE ;
PEASE, RL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) :1871-1883
[14]   X-RAY INDUCED CONDUCTIVITY IN INSULATING MATERIALS [J].
FOWLER, JF .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 236 (1207) :464-480
[15]   Study of low-dose-rate radiation effects on commercial linear bipolar ICs [J].
Freitag, RK ;
Brown, DB .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (06) :2649-2658
[16]   Modeling low-dose-rate effects in irradiated bipolar-base oxides [J].
Graves, RJ ;
Cirba, CR ;
Schrimpf, RD ;
Milanowski, RJ ;
Michez, A ;
Fleetwood, DM ;
Witczak, SC ;
Saigne, F .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (06) :2352-2360
[17]   E' CENTER IN GLASSY SIO2 - MICROWAVE SATURATION PROPERTIES AND CONFIRMATION OF THE PRIMARY SI-29 HYPERFINE-STRUCTURE [J].
GRISCOM, DL .
PHYSICAL REVIEW B, 1979, 20 (05) :1823-1834
[18]   Dose-rate dependence of radiation induced interface trap density in silicon bipolar transistors [J].
Hjalmarson, H. P. ;
Pease, R. L. ;
Hembree, C. E. ;
Van Ginhoven, R. M. ;
Schultz, P. A. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 250 (1-2 SPEC. ISS.) :269-273
[19]   Mechanisms for radiation dose-rate sensitivity of bipolar transistors [J].
Hjalmarson, HP ;
Pease, RL ;
Witczak, SC ;
Shaneyfelt, MR ;
Schwank, JR ;
Edwards, AH ;
Hembree, CE ;
Mattsson, TR .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (06) :1901-1909
[20]   APPLIED FIELD AND TOTAL DOSE DEPENDENCE OF TRAPPED CHARGE BUILDUP IN MOS DEVICES [J].
KRANTZ, RJ ;
AUKERMAN, LW ;
ZIETLOW, TC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1196-1201
12345