Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors

被引：44
作者：
Hjalmarson, Harold P. [1 ]
Pease, Ronald L. [2 ]
Devine, Roderick A. B. [3 ]
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
[2] RLP Res, Los Lunas, NM 87031 USA
[3] EMRTC NMT, Socorro, NM 87801 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 06期
关键词：
Bimolecular reaction; bipolar junction transistor; cracking; dimerization; dose rate; ELDRS; excess base current; hole; hydrogen; interface trap; kinetics; proton; radiation; recombination; silicon dioxide;
D O I：
10.1109/TNS.2008.2007487
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Mechanisms for dose-rate dependent effects of ionizing radiation are described. Bimolecular mechanisms are shown to produce reduced effects at high dose rates. Calculations using, such mechanisms are shown to produce good agreement with data from devices affected by enhanced low dose-rate sensitivity (ELDRS).
引用
收藏
页码：3009 / 3015
页数：7
相关论文
共 45 条
[1]   Proton nature of radiation-induced positive charge in SiO2 layers on Si [J].
Afanas'ev, VV ;
Stesmans, A .
EUROPHYSICS LETTERS, 2001, 53 (02) :233-239
[2]   Physical model for the low-dose-rate effect in bipolar devices [J].
Boch, J. ;
Saigne, F. ;
Schrimpf, R. D. ;
Vaille, J. -R. ;
Dusseau, L. ;
Lorfevre, E. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) :3655-3660
[3]   DEFECTS AND IMPURITIES IN THERMAL OXIDES ON SILICON [J].
BROWER, KL ;
LENAHAN, PM ;
DRESSENDORFER, PV .
APPLIED PHYSICS LETTERS, 1982, 41 (03) :251-253
[4]   MATRIX-FREE METHODS FOR STIFF SYSTEMS OF ODES [J].
BROWN, PN ;
HINDMARSH, AC .
SIAM JOURNAL ON NUMERICAL ANALYSIS, 1986, 23 (03) :610-638
[5]  
BUBE RH, 1992, PHOTOELECTRONIC PROP, P45
[6]   Mechanisms of enhanced radiation-induced degradation due to excess molecular hydrogen in bipolar oxides [J].
Chen, X. J. ;
Barnaby, H. J. ;
Vermeire, B. ;
Holbert, K. ;
Wright, D. ;
Pease, R. L. ;
Dunham, G. ;
Platteter, D. G. ;
Seiler, J. ;
McClure, S. ;
Adell, P. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) :1913-1919
[7]   Radiation-induced base current broadening mechanisms in gated bipolar devices [J].
Chen, XJ ;
Barnaby, HJ ;
Pease, RL ;
Schrimpf, RD ;
Platteter, DG ;
Dunham, G .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) :3178-3185
[8]  
Cheng DCH, 2006, CAN J ANAESTH, V53, P6, DOI 10.1007/BF03021521
[9]  
De Groot SR., 1962, NONEQUILIBRIUM THERM
[10]   Spontaneous ionization of hydrogen atoms at the Si-SiO2 interface -: art. no. 125318 [J].
Edwards, AH ;
Schultz, PA ;
Hjalmarson, HP .
PHYSICAL REVIEW B, 2004, 69 (12)
12345