In situ observation of twin boundary formation at grain-boundary groove during directional solidification of Si

被引：27

作者：

Fujiwara, Kozo ^{[1
]}

Maeda, Ryoichi ^{[1
]}

Maeda, Kensaku ^{[1
]}

Morito, Haruhiko ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Katahira 2-1-1, Sendai, Miyagi 9808577, Japan

来源：

SCRIPTA MATERIALIA | 2017年 / 133卷

关键词：

Crystal/melt interface; Grain boundary; Twin boundary; MULTI-CRYSTALLINE SILICON; MULTICRYSTALLINE SILICON; CRYSTAL/MELT INTERFACE; GROWTH;

D O I：

10.1016/j.scriptamat.2017.02.028

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Twin boundary formation at grain boundaries in multicrystalline Si during directional solidification was investigated by in situ observation of the crystal/melt interface. It was clearly shown that a twin boundary was formed on the {111} facet of grain-boundary groove at the crystal/melt interface. The large amount of undercooling in the melt at grain-boundary grooves promoted rapid crystallization and twin boundary formation. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：65 / 69

页数：5

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