Interband Cascade Lasers with Wavelengths Spanning 3.2-4.2 μm

被引：6

作者：

Canedy, C. L. ^{[1
]}

Lindle, J. R. ^{[1
]}

Bewley, W. W. ^{[1
]}

Kim, C. S. ^{[1
]}

Kim, M. ^{[1
]}

Nolde, J. A. ^{[1
]}

Vurgaftman, I. ^{[1
]}

Meyer, J. R. ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2009年 / 38卷 / 09期

关键词：

Semiconductor lasers; mid-infrared lasers; interband cascade lasers; quantum wells; type-II active regions; NARROW-RIDGE; HIGH-POWER;

D O I：

10.1007/s11664-009-0733-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a detailed experimental investigation of five interband cascade lasers with five active stages each and emitting at wavelengths between 3.2 mu m and 4.2 mu m at room temperature. Pulsed threshold current densities as low as 394 A/cm(2) and voltage efficiencies as high as 76% are obtained at 300 K. The low pulsed threshold power densities (0.9-1.6 kW/cm(2) at 300 K) imply that ambient-temperature cw operation should be possible over the entire spectral band once optimized narrow ridges can be fabricated.

引用

页码：1948 / 1951

页数：4

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