Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots

被引：1

作者：

Ning, Dandan ^{[1
,2
,3
]}

Chen, Yanan ^{[2
,3
,4
]}

Li, Xinkun ^{[5
]}

Liang, Dechun ^{[5
]}

Ma, Shufang ^{[1
]}

Jin, Peng ^{[2
,3
,4
]}

Wang, Zhanguo ^{[2
,3
,4
]}

机构：

[1] Shaanxi Univ Sci & Technol, Inst Atom & Mol Sci, Xian 710021, Peoples R China

[2] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China

[3] Chinese Acad Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Inst Semicond, Beijing 100083, Peoples R China

[4] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[5] Beijing Inst Aerosp Control Instruments, Beijing 100039, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2020年 / 41卷 / 12期

基金：

中国国家自然科学基金;

关键词：

quantum dots; rapid thermal annealing; photoluminescence; spectral width;

D O I：

10.1088/1674-4926/41/12/122101

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoluminescence (PL) test was conducted to investigate the effect of rapid thermal annealing (RTA) on the optical performance of self-assembled InAs/GaAs quantum dots (QDs) at the temperatures of 16 and 300 K. It was found that after RTA treatment, the PL spectrum of the QDs sample had a large blue-shift and significantly broadened at 300 K. Compared with the as-grown InAs QDs sample, the PL spectral width has increased by 44.68 meV in the InAs QDs sample RTA-treated at 800 degrees C. The excitation power-dependent PL measurements showed that the broadening of the PL peaks of the RTA-treated InAs QDs should be related to the emission of the ground state (GS) of different-sized InAs QDs, the InAs wetting layer (WL) and the In0.15Ga0.85As strain reduction layer (SRL) in the epitaxial InAs/GaAs layers.

引用

页数：6

共 24 条

[1] Spectral broadening due to post-growth annealing of a long-wave InGaAs/GaAs quantum dot infrared photodetector with a quaternary barrier layer [J].

Adhikary, Sourav ;

Chakrabarti, Subhananda .

THIN SOLID FILMS, 2014, 552 :146-149

[2] A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping [J].

Adhikary, Sourav ;

Chakrabarti, Subhananda .

MATERIALS RESEARCH BULLETIN, 2012, 47 (11) :3317-3322

[3] Investigation of thermal interdiffusion in InAs/In0.15Ga0.85As/GaAs quantum dot-in-a-well heterostructures [J].

Agarwal, A. ;

Srujan, M. ;

Chakrabarti, S. ;

Krishna, S. .

JOURNAL OF LUMINESCENCE, 2013, 143 :96-100

[4] Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap [J].

Babinski, A ;

Jasinski, J ;

Bozek, R ;

Szepielow, A ;

Baranowski, JM .

APPLIED PHYSICS LETTERS, 2001, 79 (16) :2576-2578

[5] In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties [J].

Bhattacharya, P ;

Kamath, KK ;

Singh, J ;

Klotzkin, D ;

Phillips, J ;

Jiang, HT ;

Chervela, N ;

Norris, TB ;

Sosnowski, T ;

Laskar, J ;

Murty, MR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (05) :871-883

[6] Quantum dots for lasers, amplifiers and computing [J].

Bimberg, D .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (13) :2055-2058

[7] High performance short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) validated with theoretically simulated model [J].

Deviprasad, Vidya P. ;

Ghadi, Hemant ;

Das, Debabrata ;

Panda, Debiprasad ;

Rawool, Harshal ;

Chavan, Vinayak ;

Tongbram, Binita ;

Patwari, Jayita ;

Pal, Samir Kumar ;

Chakrabarti, Subhananda .

JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 804 :18-26

[8] Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing [J].

Djie, H. S. ;

Wang, D. -N. ;

Ooi, B. S. ;

Hwang, J. C. M. ;

Fang, X. -M. ;

Wu, Y. ;

Fastenau, J. M. ;

Liu, W. K. .

THIN SOLID FILMS, 2007, 515 (10) :4344-4347

[9] Island size scaling in InAs/GaAs self-assembled quantum dots [J].

Ebiko, Y ;

Muto, S ;

Suzuki, D ;

Itoh, S ;

Shiramine, K ;

Haga, T ;

Nakata, Y ;

Yokoyama, N .

PHYSICAL REVIEW LETTERS, 1998, 80 (12) :2650-2653

[10] Annealing of In0.45Ga0.55As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devices [J].

Ghosh, K. ;

Kundu, S. ;

Halder, N. ;

Srujan, M. ;

Sengupta, S. ;

Chakrabarti, S. .

SOLID STATE COMMUNICATIONS, 2011, 151 (19) :1394-1399

← 1 2 3 →