Diffraction analysis of customized illumination technique

被引:4
作者
Lim, CM [1 ]
Kim, SM [1 ]
Eom, TS [1 ]
Moon, SC [1 ]
Shin, KS [1 ]
机构
[1] Hynix Semicond Inc, Memory R&D Div, Ichon 467701, Kyoungki Do, South Korea
来源
OPTICAL MICROLITHOGRAPHY XVII, PTS 1-3 | 2004年 / 5377卷
关键词
ustomized illumination; illumination optimization; Diffraction domain analysis;
D O I
10.1117/12.536357
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Various enhancement techniques such as alternating PSM, chrome-less phase lithography, double exposure, etc. have been considered as driving forces to lead the production k1 factor towards below 0.35. Among them, a layer specific optimization of illumination mode, so-called customized illumination technique receives deep attentions from lithographers recently. A new approach for illumination customization based on diffraction spectrum analysis is suggested in this paper. Illumination pupil is divided into various diffraction domains by comparing the similarity of the confined diffraction spectrum. Singular imaging property of individual diffraction domain makes it easier to build and understand the customized illumination shape. By comparing the goodness of image in each domain, it was possible to achieve the customized shape of illumination. With the help from this technique, it was found that the layout change would not gives the change in the shape of customized illumination mode.
引用
收藏
页码:1297 / 1304
页数:8
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