Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma

被引:4
|
作者
Petit, A
Robert-Goumet, C [1 ]
Bideux, L
Gruzza, B
Benamara, Z
Bouiadjra, NB
Matolin, V
机构
[1] Univ Clermont Ferrand, LASMEA, UMR 6602, F-63177 Clermont Ferrand, France
[2] Djillali Liabes Univ, AMEL, Sidi Bel Abbes, Algeria
[3] Charles Univ, Dept Elect & Vacuum Phys, CR-18000 Prague 8, Czech Republic
关键词
nitridation; AES; indium phosphide(100); indium nitride; electrical measurements;
D O I
10.1016/j.apsusc.2004.05.029
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Auger electron spectroscopy (AES) was used to investigate the processes taking place during the initial stages of InP(100) surfaces nitridation. This AES study combined with electrical measurements (intensity-voltage) shows that the processes greatly differ depending on the nitridation angles. Results show that with grazing angle for nitrogen flow, the nitridation process is more efficient. Results obtained with AES spectra are coherent with electrical measurements: Hg/InN/InP(100) Schottky diodes present different electrical characteristics for the grazing and normal flow. The passivation effect of the nitride layers depends on the incident nitrogen angle flow. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:451 / 456
页数:6
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