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Achieving uniform layer deposition by atmospheric-pressure plasma-enhanced chemical vapor deposition
被引:4
|作者:
Lee, Jae-Ok
[1
]
Kang, Woo Seok
[1
,2
]
Hur, Min
[1
]
Lee, Jin Young
[1
]
Song, Young-Hoon
[1
,2
]
机构:
[1] KIMM, Dept Plasma Engn, Daejeon 305343, South Korea
[2] Univ Sci & Technol, Dept Environm & Energy Mech Engn, Daejeon 305350, South Korea
来源:
关键词:
Plasma enhanced chemical vapor deposition (PECVD);
Atmospheric-pressure plasma;
Dielectric barrier discharge;
TEMAZr;
Zirconium dioxide;
Precursors;
DIELECTRIC BARRIER DISCHARGE;
THIN-FILMS;
SHAPED ELECTRODES;
FILAMENTARY;
TRANSITION;
PRECURSORS;
CHALLENGES;
MECHANISM;
HELIUM;
OXYGEN;
D O I:
10.1016/j.tsf.2015.11.015
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
This work investigates the use of plasma-enhanced chemical vapor deposition under atmospheric pressure for achieving uniform layer formation. Electrical and optical measurements demonstrated that the counterbalance between oxygen and precursors maintained the homogeneous discharge mode, while creating intermediate species for layer deposition. Several steps of the deposition process of the layers, which were processed on a stationary stage, were affected by flow stream and precursor depletion. This study showed that by changing the flow streamlines using substrate stage motion uniform layer deposition under atmospheric pressure can be achieved. (C) 2015 Elsevier B.V. All rights reserved.
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页码:7 / 13
页数:7
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