The AB-C Doherty Power Amplifier. Part II: Validation

被引：27

作者：

Colantonio, Paolo ^{[1
]}

Giannini, Franco ^{[1
]}

Giofre, Rocco ^{[1
]}

Piazzon, Luca ^{[1
]}

机构：

[1] Univ Roma Tor Vergata, Dept Elect Engn, Rome, Italy

来源：

INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING | 2009年 / 19卷 / 03期

关键词：

Doherty amplifier; power amplifier; high efficiency; main; auxiliary; active load modulation;

D O I：

10.1002/mmce.20351

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

In part I, the complete theoretical (and nonlinear) analysis of a Doherty amplifier employing a Class AB bias condition for the Main Amplifier and a Class C one for the Auxiliary device has been presented. In this article, the experimental validation of the proposed theory is presented, describing the step-by-step procedure to be adopted when designing an AB-C Doherty. The amplifier was realized at 2.14 GHz in hybrid form using two (0.5 mu m, 1 mm gate periphery) GaN HEMTs. (c) 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE 19: 307-316, 2009.

引用

页码：307 / 316

页数：10

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