SiGe Asymmetric Dual-k Spacer FinFETs-Based 6T SRAM Cell to Mitigate Read-Write Conflict

We propose silicon-germanium (SiGe) channel based asymmetric underlap dual-k spacer Fin-field effect transistor (AsymD-k FinFET) for high performance and robust SRAM cell. The amalgamation of channel mobility enhancement and asymmetric dual-k, offers high current drive capabilities while preserving lower short channel effects. This results in improvement of static noise margin of all possible modes of SRAM. Compared to conventional FinFET SRAM, SiGe based AsymD-k FinFET SRAM exhibits 9.16% enhancement in hold SNM, 18.22% in read and 5.96% in write SNM. Furthermore, the read and write access times reduced by 48.6% and 32.4% respectively.