Influence of nitrogen microwave radicals on sequential plasma activated bonding

被引：18

作者：

Howlader, M. M. R. ^{[1
]}

Wang, J. G. ^{[2
]}

Kim, M. J. ^{[2
]}

机构：

[1] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada

[2] Univ Texas Dallas, Dept Mat Sci & Engn, Dallas, TX 75230 USA

来源：

MATERIALS LETTERS | 2010年 / 64卷 / 03期

基金：

加拿大创新基金会;

关键词：

Sequential plasma activated bonding; Interfacial amorphous layers; Oxygen reactive ion etching plasma; Role of nitrogen MW radicals plasma; Electron energy loss spectroscopy; Water contact angle; ENERGY-LOSS SPECTROSCOPY; ROOM-TEMPERATURE WAFER; SILICON;

D O I：

10.1016/j.matlet.2009.11.044

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The role of nitrogen microwave (MW) radicals in sequential plasma activated bonding of silicon/silicon has been investigated through contact angle and electron energy loss spectroscopy (EELS) observations. The contact angle for the sequentially activated (using oxygen RIE time for 60 s followed by variable times of nitrogen MW) silicon surfaces was higher than that of the oxygen RIE activated surfaces below 300 s but it was lower than that of the surfaces treated with oxygen RIE for a prolonged activation of 1200 s. The amorphous layer of the sequentially activated interface became thicker compared to the oxygen RIE treated interface and became thinner after prolonged activation using Nitrogen radicals. The EELS measurements showed no nitrogen in the silicon and interfacial amorphous silicon oxide, but showed oxygen deficiency in the amorphous layer. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：445 / 448

页数：4

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