Electrical properties, crystallization kinetics and structure of microcrystalline Pb0.45Sn0.14Te0.39In0.02 system

被引：5

作者：

Adam, A ^{[1
]}

Wahab, LA

Sedeek, K

机构：

[1] Al Azhar Univ, Fac Sci Girls, Dept Phys, Cairo, Egypt

[2] Natl Ctr Radiat Res & Technol, Cairo, Egypt

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2003年 / 79卷 / 01期

关键词：

kinetics of crystallization; microcrystalline structure; electrical conductivity;

D O I：

10.1016/S0254-0584(02)00293-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work reports investigation of the hydrostatic density, microhardness dc conductivity, crystallization kinetics and crystal structure for Pb-0.45 Sn0.14Te0.39In0.02 compound. Thermal emission of activated carriers over the intercrystalline barrier is suggested for the conduction mechanism. Studies of the crystallization kinetics using the non-isothermal single scan technique (DSC) shows that the growth proceeds with two different rates in three dimensions. Thermal annealing at 140degreesC for 80 h gives better crystalline structure as indicated by XRD analysis. Analytical calculations of the structure show that the studied compound crystallizes in the tetragonal form. Values of the calculated lattice parameters and the unit cell size are determined. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：15 / 20

页数：6

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[2]

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[3]

AKIMOV BA, 1981, SOV PHYS SEMICOND+, V15, P1294

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