A new RuO4 solvent solution for pure ruthenium film depositions

被引：36

作者：

Gatineau, Julien ^{[1
]}

Yanagita, Kazutaka ^{[1
]}

Dussarrat, Christian ^{[1
]}

机构：

[1] Air Liquide Labs, Tsukuba, Ibaraki 3004247, Japan

来源：

MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 11-12期

关键词：

ruthenium; ruthenium oxide; deposition; CVD; ALD;

D O I：

10.1016/j.mee.2006.10.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ruthenium films were deposited using an inorganic precursor, RuO4. Ruthenium tetroxide was dissolved in a solvent chosen for its complementary properties with the precursor. The resulting solution is called ToRuS. The use of hydrogen as the only reducing co-reactant enabled us to form low impurity content ruthenium films. Tests were successfully carried out at low pressure by Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) methods, in which ruthenium films were deposited at temperatures as low as 200 degrees C. ToRuS can also be used as a single source precursor for depositing ruthenium dioxide films at temperatures of 400 degrees C and above. This new process, using the volatile RuO4 precursor, is characterized by high deposition rates, pure films with good uniformity, good adherence to many types of substrates and negligible incubation time. Inhalation tests of the solution were performed on rats and its low-toxicity was proven. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2248 / 2252

页数：5

共 6 条

[1] Atomic layer deposition of ruthenium thin films from Ru(thd)3 and oxygen [J].