Increased photon density of states at defect-mode frequencies led enhancement of tunability of spontaneous emission from Eu2+, 3+ doped SiO2/SnO2 one-dimensional photonic crystals

被引：9

作者：

Das, Pratyusha ^{[1
]}

Maiti, Rishi ^{[1
]}

Ray, Samit K. ^{[1
]}

Bhaktha, B. N. Shivakiran ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India

来源：

MATERIALS RESEARCH EXPRESS | 2015年 / 2卷 / 03期

关键词：

photonic crystal; photon density of states; photoluminescence; sol-gel; LIQUID-CRYSTAL; WAVE-GUIDES; MICROCAVITIES;

D O I：

10.1088/2053-1591/2/3/036201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

One-dimensional photonic crystal (1DPhC) micro-cavity resonators, constituted of Eu-2+,Eu- 3+ doped silica layer inserted between two 5-bilayered SiO2/SnO2 Bragg mirrors, are fabricated by sol-gel process. The 1DPhC exhibits a similar to 180 nm wide stop-band, with peak-reflectivity of more than 96%. Spectral modifications of the photonic stop-band by varying the angle of detection with respect to the sample surface normal are studied. With an increase in the detection angle from 0 degrees to 45 degrees the defect-mode continuously sweeps from 598.6 nmto 532.0 nm, selectively enhancing the coinciding Eu-2+,Eu- 3+ emission. To quantify the increase in spontaneous emission at defect-mode frequencies, a relative enhancement factor is devised. The increased photon density of states at defect-mode frequencies is found to enhance the weak emission tail of Eu-2+,Eu- 3+ ions by a factor of similar to 9.

引用

页数：6

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