Effects of pulsed plasma on low temperature growth of Pb-based ferroelectric films in direct liquid injection metalorganic chemical vapor deposition

被引：4

作者：

Byun, Kyung-Mun ^{[1
]}

Lee, Won-Jong ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

CURRENT APPLIED PHYSICS | 2007年 / 7卷 / 02期

关键词：

pulsed plasma; direct liquid injection; MOCVD; PZT; FRAM;

D O I：

10.1016/j.cap.2006.02.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the effects of pulsed plasma on the low temperature (380 degrees C) growth of Pb-based ferroelectric films using direct liquid injection metalorganic chemical vapor deposition (DLI-MOCVD). With an appropriately tuned pulsed plasma, stoichiometric lead titanate (PT) films having pure perovskite phases could be obtained over a wider range of metalorganic precursor input flow rate ratio. The processing window for the fabrication of stoichiometric lead zirconate titanate (PZT) films was also expanded with the assistance of the pulsed plasma. The step coverage characteristic was not degraded by the application of the pulsed plasma. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：113 / 117

页数：5

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