Electronic properties of two-dimensional hexagonal germanium

被引：110

作者：

Houssa, M. ^{[1
]}

Pourtois, G. ^{[2
]}

Afanas'ev, V. V. ^{[1
]}

Stesmans, A. ^{[1
]}

机构：

[1] Univ Leuven, Semicond Phys Lab, Dept Phys & Astron, B-3001 Louvain, Belgium

[2] IMEC, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 08期

关键词：

ab initio calculations; density functional theory; electronic density of states; elemental semiconductors; Fermi level; germanium; internal stresses; narrow band gap semiconductors; surface states; SILICON NANOTUBES; GRAPHENE;

D O I：

10.1063/1.3332588

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic properties of two-dimensional hexagonal germanium, so called germanene, are investigated using first-principles simulations. Consistent with previous reports, the surface is predicted to have a "poor" metallic behavior, i.e., being metallic with a low density of states at the Fermi level. It is found that biaxial compressively strained germanene is a gapless semiconductor with linear energy dispersions near the K points-like graphene. The calculated Fermi velocity of germanene is almost independent of the strain and is about 1.7x10(6) m/s, quite comparable to the value in graphene.

引用

页数：3

共 17 条

[1] RELATIVISTIC AND CORE-RELAXATION EFFECTS ON THE ENERGY-BANDS OF GALLIUM-ARSENIDE AND GERMANIUM [J].

BACHELET, GB ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1985, 31 (02) :879-887

[2] Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium [J].

Cahangirov, S. ;

Topsakal, M. ;

Akturk, E. ;

Sahin, H. ;

Ciraci, S. .

PHYSICAL REVIEW LETTERS, 2009, 102 (23)

[3] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[4]

CHRISTENSEN NE, 1984, PHYS REV B, V30, P5753, DOI 10.1103/PhysRevB.30.5753

[5] Ab initio calculations for a hypothetical material:: Silicon nanotubes [J].

Fagan, SB ;

Baierle, RJ ;

Mota, R ;

da Silva, AJR ;

Fazzio, A .

PHYSICAL REVIEW B, 2000, 61 (15) :9994-9996

[6] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[7] Electronic properties of (100)Ge/Ge(Hf)O2 interfaces:: A first-principles study [J].

Houssa, M. ;

Pourtois, G. ;

Caymax, M. ;

Meuris, M. ;

Heyns, M. M. .

SURFACE SCIENCE, 2008, 602 (04) :L25-L28

[8] First-principles study of the electronic properties of Ge dangling bonds at (100)Si1-xGex/SiO2 interfaces [J].

Houssa, M. ;

Afanas'ev, V. V. ;

Stesmans, A. ;

Pourtois, G. ;

Meuris, M. ;

Heyns, M. M. .

APPLIED PHYSICS LETTERS, 2009, 95 (16)

[9] First-principles study of the structural and electronic properties of (100)Ge/Ge(M)O2 interfaces (M=Al, La, or Hf) [J].

Houssa, M. ;

Pourtois, G. ;

Caymax, M. ;

Meuris, M. ;

Heyns, M. M. .

APPLIED PHYSICS LETTERS, 2008, 92 (24)

[10] Physics of Silicene Stripes [J].

Kara, A. ;

Leandri, C. ;

Davila, M. E. ;

Padova, P. De ;

Ealet, B. ;

Oughaddou, H. ;

Aufray, B. ;

Lay, G. Le .

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, 2009, 22 (03) :259-263

← 1 2 →