Electronic properties of two-dimensional hexagonal germanium

被引：109
作者：
Houssa, M. [1 ]
Pourtois, G. [2 ]
Afanas'ev, V. V. [1 ]
Stesmans, A. [1 ]
机构：
[1] Univ Leuven, Semicond Phys Lab, Dept Phys & Astron, B-3001 Louvain, Belgium
[2] IMEC, B-3001 Louvain, Belgium
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 08期
关键词：
ab initio calculations; density functional theory; electronic density of states; elemental semiconductors; Fermi level; germanium; internal stresses; narrow band gap semiconductors; surface states; SILICON NANOTUBES; GRAPHENE;
D O I：
10.1063/1.3332588
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electronic properties of two-dimensional hexagonal germanium, so called germanene, are investigated using first-principles simulations. Consistent with previous reports, the surface is predicted to have a "poor" metallic behavior, i.e., being metallic with a low density of states at the Fermi level. It is found that biaxial compressively strained germanene is a gapless semiconductor with linear energy dispersions near the K points-like graphene. The calculated Fermi velocity of germanene is almost independent of the strain and is about 1.7x10(6) m/s, quite comparable to the value in graphene.
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