Integrate-and-Fire Neuron Circuit and Synaptic Device using Floating Body MOSFET with Spike Timing-Dependent Plasticity

被引:8
作者
Kwon, Min-Woo
Kim, Hyungjin
Park, Jungjin
Park, Byung-Gook [1 ]
机构
[1] Seoul Natl Univ, ISRC, 1 Gwanak Ro, Seoul 151742, South Korea
基金
新加坡国家研究基金会;
关键词
Integrate-and-fire neuron circuit; synaptic transistor; spike-timing-dependent-plasticity; long and short-term memory; floating body MOSFET; SYNAPSES; NETWORK;
D O I
10.5573/JSTS.2015.15.6.658
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the previous work, we have proposed an integrate-and-fire neuron circuit and synaptic device based on the floating body MOSFET [1-3]. Integrate-and-Fire(I&F) neuron circuit emulates the biological neuron characteristics such as integration, threshold triggering, output generation, refractory period using floating body MOSFET. The synaptic device has short-term and long-term memory in a single silicon device. In this paper, we connect the neuron circuit and the synaptic device using current mirror circuit for summation of post synaptic pulses. We emulate spike-timing-dependent-plasticity (STDP) characteristics of the synapse using feedback voltage without controller or clock. Using memory device in the logic circuit, we can emulate biological synapse and neuron with a small number of devices.
引用
收藏
页码:658 / 663
页数:6
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