Effects of Room Temperature Heavy-Ion Irradiation on Magnetic and Electrical Properties of a Single Crystalline Iron Thin Film

被引：5

作者：

Kamada, Yasuhiro ^{[1
,2
]}

Watanabe, Hideo ^{[3
]}

Mitani, Seiji ^{[4
]}

Echigoya, Jun-ichi ^{[1
,2
]}

Kikuchi, Hiroaki ^{[1
,2
]}

Kobayashi, Satoru ^{[1
,2
]}

Yoshida, Naoaki ^{[3
]}

Takanashi, Koki ^{[5
]}

机构：

[1] Iwate Univ, Fac Engn, NDE, Morioka, Iwate 0208551, Japan

[2] Iwate Univ, Fac Engn, Ctr Sci Res, Morioka, Iwate 0208551, Japan

[3] Kyushu Univ, Appl Mech Res Inst, Kasuga, Fukuoka 8168580, Japan

[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[5] Tohoku Univ, Inst Mat Sci, Sendai, Miyagi 9808577, Japan

来源：

MATERIALS TRANSACTIONS | 2009年 / 50卷 / 09期

关键词：

ion irradiation; epitaxial film; resistivity; magnetocrystalline anisotropy; coercive force; NEUTRON; FE; SURFACE; DAMAGE;

D O I：

10.2320/matertrans.MAW200907

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the magnetic and electrical properties of a heavy-ion irradiated single crystalline iron film. A high quality Fe (001) film on MgO (001) was fabricated using the molecular beam epitaxy technique. The iron film was treated by 3.2 MeV Ni ion irradiation at room temperature using a tandem accelerator. Although the residual electrical resistivity increased by 0.9 x 10(-8) Omega m after ion irradiation, the M-H curves did not change significantly. These results indicate that the formation of small irradiation defects such as sub-nanometer size vacancy clusters has little influence on magnetocrystalline anisotropy and the magnetization process of iron. [doi:10.2320/matertrans.MAW200907]

引用

页码：2134 / 2138

页数：5

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