Design sensitivities to variability: Extrapolations and assessments in nanometer VLSI

被引:51
作者
Cao, Y [1 ]
Gupta, P [1 ]
Kahng, AB [1 ]
Sylvester, D [1 ]
Yang, J [1 ]
机构
[1] Univ Calif Berkeley, EECS Dept, Berkeley, CA 94720 USA
来源
15TH ANNUAL IEEE INTERNATIONAL ASIC/SOC CONFERENCE, PROCEEDINGS | 2002年
关键词
D O I
10.1109/ASIC.2002.1158094
中图分类号
TP31 [计算机软件];
学科分类号
081202 ; 0835 ;
摘要
We propose a new framework for assessing (1) the impact of process variation on circuit performance and product value, and (2) the respective returns on investment for alternative process improvements. Elements of our framework include accurate device models and circuit simulation, along with Monte-Carlo analyses, to estimate parametric yields. We evaluate the merits of taking into account such previously unconsidered phenomena as correlations among process parameters. We also evaluate the impact of process variation with respect to such relevant metrics as parametric yield at selling point, and amount of required design guardbanding. Our experimental results yield insights into the scaling of process variation impacts through the next two ITRS technology nodes.
引用
收藏
页码:411 / 415
页数:5
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