Carrier transport properties in high resistivity polycrystalline CdZnTe material

被引：13

作者：

Kim, KiHyun

Ahn, SooYong

An, SeYoung

Hong, JinKi

Yi, Yun

Kim, SunUng ^{[1
]}

机构：

[1] Korea Univ, Dept Display & Semicond Phys, Chungnam 339800, South Korea

[2] Samil Pharm Co, Div Med Sensors, Seoul 137849, South Korea

[3] Korea Inst Sci & Technol, Opt Sensor Lab, Seoul 130650, South Korea

[4] Korea Univ, Div Elect & Informat, ChungNam 339700, South Korea

来源：

CURRENT APPLIED PHYSICS | 2007年 / 7卷 / 03期

关键词：

polycrystalline; CdZnTe; mobility-lifetime product; time-of-flight; compensation; annealing; high resistivity;

D O I：

10.1016/j.cap.2006.09.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties of polycrystalline CdZnTe (Zn = 4%) having high resistivity (3.3 x 10(9) Omega cm) were investigated by using the time-of-flight technique. We have found that the average drift mobility of as-deposited polycrystalline CdZnTe samples is 1.21 cm(2)/V s and the electron trapping time is 4.6 mu s. In a comparison of annealed samples at different conditions, the variation of resistivity in polycrystalline CdZnTe is considered to be mainly related to the fluctuation of carrier concentration, which originates from the change of density in deep level. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：296 / 299

页数：4

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