Manipulating exciton fine structure in quantum dots with a lateral electric field

被引:171
作者
Gerardot, B. D. [1 ]
Seidl, S.
Dalgarno, P. A.
Warburton, R. J.
Granados, D.
Garcia, J. M.
Kowalik, K.
Krebs, O.
Karrai, K.
Badolato, A.
Petroff, P. M.
机构
[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland
[2] CSIC, CNM, Inst Microelect Madrid, PTM, Madrid 28760, Spain
[3] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
[4] LMU, Ctr NanoSci, D-80539 Munich, Germany
[5] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1063/1.2431758
中图分类号
O59 [应用物理学];
学科分类号
摘要
The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero. (c) 2007 American Institute of Physics.
引用
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页数:3
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